In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 5R ( 2010-05-01), p. 052302-
Abstract:
Silicon doping in a barrier layer has been demonstrated to improve crystal quality and the interfacial quality of InGaN/GaN quantum wells. Furthermore, it also reduces piezoelectric field with heavy silicon doping. In this work, the characteristics of 30-pair In x Ga 1- x N/GaN quantum well solar cells with undoped wells/undoped barriers (UWUB), Si-doped wells/Si-doped barriers (DWDB), and undoped wells/Si-doped barriers (UWDB) are compared and investigated. The short circuit currents ( J sc ) of the solar cells with UWUB, DWDB, and UWDB are 0.54, 0.16, and 0.23 mA/cm 2 , respectively. This indicates that the electric field in quantum wells dominates the collected current capability. The open circuit voltages ( V oc ) of the solar cells with UWUB, DWDB, and UWDB are 2.18, 1.38, and 1.91 V, respectively. Recombination rate determines V oc . The solar cell with UWUB exhibits the highest efficiency among the three solar cells. The temperature dependences of solar efficiency differ in three cases. As temperature increases, solar efficiency decreases in the UWUB sample, and increases in the DWDB and UWDB samples owing to the competition between the increasing J sc and the decreasing V oc .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.052302
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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