In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 29, No. 11A ( 1990-11-01), p. L2111-
Abstract:
Postirradiation annealing was used to efficiently reduce the oxide leakage currents in MOS structures after sample preparation. Generally, it is found that leakage currents exist more or less in oxide no matter how the oxidation process changes. However, when a sample receives an irradiation of 60 Co with a total dose of 10 6 rads (SiO 2 ) and an anneal in N 2 at 400°C for 10 minutes successively, its high-frequency and quasi-static capacitance-voltage ( C - V ) curves are nearly coincident in the accumulation region. It is shown that in each postirradiation annealing, the irradiation improves the oxide leakage current while the anneal recovers the radiation-induced damage. Both the bulk oxide leakage current and the surface leakage current are suitably improved after postirradiation annealing.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.29.L2111
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1990
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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