In:
Frontiers in Physics, Frontiers Media SA, Vol. 10 ( 2022-11-21)
Abstract:
In this paper, the lateral Schottky barrier diodes (SBDs) with small capacitance and low turn-on voltage ( V on ) were fabricated on n-GaN and AlGaN/GaN heterostructure. The capacitances of lateral n-GaN SBD and lateral AlGaN/GaN SBD are 1.35 pF/mm and 0.70 pF/mm, respectively. Compared with the planar SBDs, the capacitances of lateral SBDs are reduced by about two orders of magnitude without sacrificing the performance of on-resistance ( R on ) and reverse leakage current. For the planar and lateral n-GaN SBDs, the value of the V on is similar. However, compared with the planar AlGaN/GaN SBD, the V on of lateral AlGaN/GaN SBD is reduced from 1.64 V to 0.87 V owing to the anode metal directly contacting the two-dimensional electron gas. According to temperature-dependent I-V results, the barrier inhomogeneity of the lateral SBD is more intensive than the planar SBD, which is attributed to etching damage. The withstand voltage of SBD is a very important parameter for power electronic applications. Compared with the breakdown voltage of 73 V in the lateral n-GaN SBD, the lateral AlGaN/GaN SBDs exhibit a breakdown voltage of 2322 V. In addition, we found that Schottky contact introduces anode resistance ( R A ) by analysing the R on distribution of lateral SBDs. The experimental results also show that the R A of lateral n-GaN SBD and lateral AlGaN/GaN SBD are 10.5 Ω mm and 9.2 Ω mm respectively, which are much larger than the ohmic contact resistance due to worsening anode contact by metal-induced gap states.
Type of Medium:
Online Resource
ISSN:
2296-424X
DOI:
10.3389/fphy.2022.1084214
Language:
Unknown
Publisher:
Frontiers Media SA
Publication Date:
2022
detail.hit.zdb_id:
2721033-9
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