In:
Applied Physics Letters, AIP Publishing, Vol. 91, No. 26 ( 2007-12-24)
Abstract:
Based on the first-principles calculations, the electronic structure and magnetic properties of Fe-doped In2O3 were theoretically investigated. The presence of the predominating defects in oxide, i.e., oxygen vacancies, can lead to strong ferromagnetic coupling between the nearest neighboring Fe cations. Spin density and band-projected charge distribution in the vicinity of the oxygen vacancies reveal that the ferromagnetic exchange is mediated by the donor impurity state, which mainly consists of Fe:3d and Fe:4s electrons trapped in oxygen vacancies. Such results provide direct evidence for the F-center mediated exchange interaction in oxide-based magnetic semiconductors.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2007
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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