In:
Journal of Materials Chemistry C, Royal Society of Chemistry (RSC), Vol. 11, No. 20 ( 2023), p. 6580-6587
Abstract:
Low voltage operation is of critical importance for organic field effect transistors (OFETs) in next-generation flexible and wearable electronics, wherein the use of high- k dielectrics has been proved to be the most promising way. However, high- k dielectrics typically lead to a substantial reduction of device performance, including the key figures of merit of mobility and on/off ratio. The realization of low voltage operation at the cost of device performance blocked their practical applications. To date, it is still challenging to construct low-voltage high-performance OFETs. Herein, a novel structured dielectric ( i.e. , hafnium–aluminum binary metal oxide, HAO) was developed using a designed “nitrogen–air–nitrogen (NAN)” process under high-temperature annealing, which exhibits high permittivity, appropriate bonding, atomically flat surface, excellent insulating properties, and homogeneous amorphous characteristics. As a result, the OFET-based HAO dielectric demonstrated promising performances, including the mobility comparable to those prepared using an octadecyltrichlorosilane (OTS)-modified SiO 2 substrate, a subthreshold slope approaching a theoretical limit of 60 mV dec −1 , an operating voltage of 3 V, and an on/off ratio of 10 7 . Based on these OFETs, complementary-like inverters were constructed successfully, which showed a remarkably high gain of 172 ( V DD = 4 V). The development of high quality high- k dielectrics paves the way for constructing low-power optoelectronic devices for wearable electronics.
Type of Medium:
Online Resource
ISSN:
2050-7526
,
2050-7534
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2023
detail.hit.zdb_id:
2702245-6
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