In:
Nanoscale, Royal Society of Chemistry (RSC), Vol. 15, No. 1 ( 2023), p. 356-364
Abstract:
It is hoped that two-dimensional (2D) semiconductors overcome the short channel effect and continue Moore's law. However, 2D material-based ultra-short channel devices still face the challenge of simultaneously achieving high-performance (HP) and low-power (LP) consumption. Here, we theoretically designed monolayer OM 2 S (M = Ga, In)-based metal–oxide–semiconductor field-effect transistors (MOSFETs), considering the gate length from 1 to 5 nm, doping concentration and underlap structure. We found that in HP (LP) applications, the on-state current exceeds 1000 (500) μA μm −1 under a 1 nm (2 nm) gate length, surpassing the needs of the International Technology Roadmap for Semiconductors (ITRS) in 2028. The subthreshold swing is close to the Boltzmann tyranny (60 mV dec −1 ) even as the gate length shrinks to 2 nm. The energy-delay product is two orders lower than 1.02 × 10 −28 J s μm −1 , indicating extraordinary high-speed manipulation and low-energy expending. Therefore, monolayer OM 2 S has great application in ultra-short scale devices with HP and LP consumption, and can be taken as a candidate to extend Moore's Law.
Type of Medium:
Online Resource
ISSN:
2040-3364
,
2040-3372
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2023
detail.hit.zdb_id:
2515664-0
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