In:
ECS Transactions, The Electrochemical Society, Vol. 25, No. 10 ( 2009-09-25), p. 73-78
Abstract:
In this paper, by sping-coating a mono layer of nanospheres (nanoparticles) on top of the sample, the technology of nanosphere lithography is developed and applied to GaN based LED epi-structures. By etching the p-type GaN further through the active region, p-i-n nanorods are exposed all over the mesa area. By inserting a spacer layer in between rods, nanrod LED arrays can be realized without shorting the p-type contact to n-GaN. The electrical and optical properties of the InGaN/GaN-based nano-devices are investigated at room temperatures.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2009
detail.hit.zdb_id:
2217591-X
detail.hit.zdb_id:
2251888-5
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