In:
Advanced Materials, Wiley, Vol. 35, No. 28 ( 2023-07)
Abstract:
The p–n junction with bipolar characteristics sets the fundamental unit to build electronics while its unique rectification behavior constrains the degree of carrier tunability for expanded functionalities. Herein, a bipolar‐junction photoelectrode employed with a gallium nitride (GaN) p–n homojunction nanowire array that operates in electrolyte is reported, demonstrating bipolar photoresponse controlled by different wavelengths of light. Significantly, with rational decoration of a ruthenium oxides (RuO x ) layer on nanowires guided by theoretical modeling, the resulting RuO x /p–n GaN photoelectrode exhibits unambiguously boosted bipolar photoresponse by an enhancement of 775% and 3000% for positive and negative photocurrents, respectively, compared to the pristine nanowires. The loading of the RuO x layer on nanowire surface optimizes surface band bending, which facilitates charge transfer across the GaN/electrolyte interface, meanwhile promoting the efficiency of redox reaction for both hydrogen evolution reaction and oxygen evolution reaction which corresponds to the negative and positive photocurrents, respectively. Finally, a dual‐channel optical communication system incorporated with such photoelectrode is constructed with using only one photoelectrode to decode dual‐band signals with encrypted property. The proposed bipolar device architecture presents a viable route to manipulate the carrier dynamics for the development of a plethora of multifunctional optoelectronic devices for future sensing, communication, and imaging systems.
Type of Medium:
Online Resource
ISSN:
0935-9648
,
1521-4095
DOI:
10.1002/adma.202300911
Language:
English
Publisher:
Wiley
Publication Date:
2023
detail.hit.zdb_id:
1474949-X
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