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  • 1
    Online Resource
    Online Resource
    Characterization of Diamond Films Grown on Amorphous SiO 2
    IOP Publishing ; 1996
    In:  Japanese Journal of Applied Physics Vol. 35, No. 4R ( 1996-04-01), p. 2255-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 4R ( 1996-04-01), p. 2255-
    Abstract: Continuous diamond film growth on SiO 2 was achieved by an effective pretreatment. Carbon implantation and diamond powder abrasion were used to enhance diamond nucleation on SiO 2 . The possibility of using two gas mixtures (CH 4 –CO 2 and CH 4 –H 2 ) in order to achieve the growth of continuous diamond films on SiO 2 was examined. The diamond film growth rate obtained using the CH 4 –CO 2 gas mixture was 0.6 µm/h which is roughly three times higher than that of the CH 4 –H 2 gas mixture. CH 4 –H 2 gas mixtures had a lower etching reaction rate than that of CH 4 –CO 2 gas mixtures. The higher etching rate of the CH 4 –CO 2 gas mixture was considered to be due to a higher concentration of active carbon radicals or carbon-containing species in the plasma. Scanning electron microscopy (SEM) and optical emission spectroscopy (OES) indicated that active carbon radicals and carbon-containing species are the major cause of pits arising at the surface. Using CH 4 –H 2 gas mixtures at a low microwave power gave the optimum reaction conditions for depositing diamond films on SiO 2 layers.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.35.2255
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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  • 2
    Online Resource
    Online Resource
    Fabrication and Characterization of Diamond-Clad Silicon Field Emitter Arrays
    IOP Publishing ; 1995
    In:  Japanese Journal of Applied Physics Vol. 34, No. 12S ( 1995-12-01), p. 6926-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 12S ( 1995-12-01), p. 6926-
    Abstract: Microsized silicon tip arrays with sharp curvature were formed based on the techniques including reactive ion etching and oxidation-sbarpening. A new fabrication technology of polycrystalline diamond-clad Si microtips using microwave plasma CVD (MPCVD) was subsequently developed to improve the capability and stability of the field emission from the pure Si tips. By means of SEM and transmission electron microscopy (TEM), the as-deposited films are found to be polycrystalline diamond with fine grain (∼800 Å) structure. With the anode voltage of 1100 V and anode-to-cathode distance of 30 µ m, the emission current of 240 µA in a 50×50 diamond-clad Si microtip array can be achieved, which is much higher than those for Cr-clad and pure Si microtip arrays. Based on curve fitting of a Fowler-Nordheim ( F-N ) plot, such great improvement is partially attributed to the lowering of the effective work function from 5.5 eV to 2.08 eV.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.34.6926
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1995
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
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