In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 4R ( 2001-04-01), p. 2408-
Abstract:
Self-aligned surface and interfacial MgO layers were formed by pre-annealing Cu(Mg)/SiO 2 /Si and Cu(Mg)/TiN/Si multilayer films at 500°C in an oxygen ambient, resulting in the structures of MgO/Cu/MgO/SiO 2 /Si and MgO/Cu/MgO/TiN/Si, respectively. During pre-annealing, Mg segregates preferentially to the Cu surface until a dense, uniform MgO layer of 150 Å thickness is formed. Substantial Mg segregation to the SiO 2 or TiN surface also takes place to form an interfacial MgO layer. Diffusion barrier characteristics of the surface MgO layer were investigated by vacuum-annealing the Si/MgO/Cu(Mg)/MgO/SiO 2 /Si multilayer structure. It was shown that self-aligned surface MgO produced by the annealing process prevents interdiffusion of Cu and Si up to 700°C. Furthermore, interfacial MgO between Cu and SiO 2 or TiN reduces diffusion of Cu into the Si substrate at temperatures up to 700–800°C, indicating that self-aligned interfacial MgO plays an important role in suppressing interdiffusion between the Cu and TiN or SiO 2 . Consequently, the thermal stability of Cu/SiO 2 /Si and Cu/TiN/Si multilayer systems is significantly enhanced by introducing self-aligned surface and interfacial layers of MgO from Cu(Mg) alloy films.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.2408
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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