In:
Journal of Materials Research, Springer Science and Business Media LLC, Vol. 27, No. 9 ( 2012-05-14), p. 1314-1323
Abstract:
Boron-doped, single (∼54 nm) or double (∼21 + 54 nm) Si 1− x Ge x layers were epitaxially grown on 300-mm-diameter p − -Si(100) device wafers with 20 nm technology node design features, by ultrahigh vacuum chemical vapor deposition. The Si 1− x Ge x /Si wafers were annealed in the temperature range of 950–1050 °C for 60 s to investigate the effect of annealing on possible changes of Ge content and Si stress near the Si 1− x Ge x /Si interface. High spectral resolution, micro-Raman spectroscopy was used as a nondestructive characterization technique with five excitation wavelengths of 363.8, 441.6, 457.9, 488.0, and 514.5 nm. Ge diffusion and generation of compressive stress at the Si 1− x Ge x /Si interface were measured on all annealed wafers. Ge diffusion and the accumulation of compressive Si stress after annealing showed significantly different behaviors between single- and double-layer Si 1− x Ge x /Si wafers. Raman characterization results were compared with secondary ion mass spectroscopy and high-resolution x-ray diffraction results.
Type of Medium:
Online Resource
ISSN:
0884-2914
,
2044-5326
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2012
detail.hit.zdb_id:
54876-5
detail.hit.zdb_id:
2015297-8
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