In:
NPG Asia Materials, Springer Science and Business Media LLC, Vol. 13, No. 1 ( 2021-12)
Abstract:
Two-dimensional transition metal dichalcogenide materials (TMDs), such as molybdenum disulfide (MoS 2 ), have been considered promising candidates for future electronic applications owing to their electrical, mechanical, and optical properties. Here, we present a new concept for multifunctional MoS 2 flash memory by combining a MoS 2 channel with a PEDOT:PSS floating layer. The proposed MoS 2 memory devices exhibit a switching ratio as high as 2.3 × 10 7 , a large memory window (54.6 ± 7.80 V), and high endurance ( 〉 1,000 cycles). As the PEDOT:PSS film enables a low-temperature solution-coating process and mechanical flexibility, the proposed P-memory can be embedded on a polyimide substrate over a rigid silicon substrate, offering high mechanical endurance (over 1,000 cycle bending test). Furthermore, both MoS 2 and PEDOT:PSS have a bandgap that is desirable in optoelectronic memory operation, where charge carriers are stored differently in the floating gate depending on light illumination. As a new application that combines photodiodes and memory functions, we demonstrate multilevel memory programming based on light intensity and color.
Type of Medium:
Online Resource
ISSN:
1884-4049
,
1884-4057
DOI:
10.1038/s41427-021-00307-x
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2021
detail.hit.zdb_id:
2608333-4
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