In:
Dalton Transactions, Royal Society of Chemistry (RSC), Vol. 52, No. 11 ( 2023), p. 3386-3390
Abstract:
The authors report a Br doping effect on the NO 2 gas sensing properties of a two-dimensional (2D) SnSe 2 semiconductor. Single crystalline 2D SnSe 2 samples with different Br contents are grown by a simple melt-solidification method. By analyzing the structural, vibrational as well as electrical properties, it can be confirmed that the Br impurity substitutes on the Se-site in SnSe 2 serving as an efficient electron donor. When we measure the change of resistance under a 20 ppm NO 2 gas flow condition at room temperature, both responsivity and response time are drastically improved by Br doping from 1.02% and 23 s to 3.38% and 15 s, respectively. From these results, it can be concluded that Br doping plays a key role for encouraging the charge transfer efficiency from the SnSe 2 surface to the NO 2 molecule by elaborating Fermi level in 2D SnSe 2 .
Type of Medium:
Online Resource
ISSN:
1477-9226
,
1477-9234
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2023
detail.hit.zdb_id:
2001339-5
detail.hit.zdb_id:
1472887-4
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