In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 12A ( 1996-12-01), p. L1569-
Abstract:
Shallow Pd/Ge ohmic contacts to n -type In 0.53 Ga 0.47 As with low specific contact resistivity are obtained by the rapid thermal annealing method. For samples annealed at 425°C for 30 s, the lowest resistivity value is 6.66×10 -8 Ω·cm 2 and the average value is 1.4×10 -6 Ω·cm 2 . For samples annealed at 425°C for 60 s, the lowest resistivity value is 2.13×10 -7 Ω·cm 2 and the average value is 8.6×10 -7 Ω·cm 2 . Secondary ion mass spectrometry (SIMS) analysis shows that the ohmic contact is very shallow. It is found that there is a correlation between gallium and indium SIMS signal bumps and good ohmic contact behavior.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.L1569
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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