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  • 1
    Online Resource
    Online Resource
    Ferroelectric BiFeO 3 /TiO 2 nanotube heterostructures for enhanced photoelectrochemical performance
    Elsevier BV ; 2017
    In:  Current Applied Physics Vol. 17, No. 5 ( 2017-05), p. 679-683
    Details
    In: Current Applied Physics, Elsevier BV, Vol. 17, No. 5 ( 2017-05), p. 679-683
    Type of Medium: Online Resource
    ISSN: 1567-1739
    URL: Article
    DOI: 10.1016/j.cap.2017.02.015
    Language: English
    Publisher: Elsevier BV
    Publication Date: 2017
    detail.hit.zdb_id: 2039065-8
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  • 2
    Online Resource
    Online Resource
    One-dimensional nanostructured vanadium oxides with single-crystalline structure synthesized by cellulose nanocrystal-template-assisted hydrothermal method for Li-ion battery cathodes
    Springer Science and Business Media LLC ; 2023
    In:  Cellulose Vol. 30, No. 11 ( 2023-07), p. 7177-7191
    Details
    In: Cellulose, Springer Science and Business Media LLC, Vol. 30, No. 11 ( 2023-07), p. 7177-7191
    Type of Medium: Online Resource
    ISSN: 0969-0239 , 1572-882X
    URL: Article
    DOI: 10.1007/s10570-023-05325-2
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 2023
    detail.hit.zdb_id: 1496831-9
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  • 3
    Online Resource
    Online Resource
    Enhanced Oxygen Evolution Reaction Performance of WO 3 /Nb:SrTiO 3 Heterostructures By Graphene Layer
    The Electrochemical Society ; 2020
    In:  ECS Meeting Abstracts Vol. MA2020-01, No. 37 ( 2020-05-01), p. 1560-1560
    Details
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2020-01, No. 37 ( 2020-05-01), p. 1560-1560
    Abstract: Photoelectrochemical (PEC) water splitting using photo-active nanomaterials is a promising technique to generate hydrogen in a sustainable way. The charge-transfer and charge separation in photoelectrode are important factors in determining the performance of PECs. Here, we utilize single layer graphene as a photocatalyst on WO 3 thin film / Nb:SrTiO 3 (100) structure to enhance oxygen evolution reaction in alkaline electrolyte. The graphene-decorated photoelectrodes exhibit efficient charge transfer due to electronic and electrochemical properties of graphene edges, which leads to decreasing onset potential and increasing photo current density from 237 μA/cm 2 to 763 μA/cm 2 at 1.23 V vs RHE. In addition, such extremely thin layer can protect the photoelectrode from chemical corrosion without disturbing the light absorption. We discuss the role of graphene edges for photoelectrochemical water oxidation. Thus, these results can provide a new route for advanced designs of nanomaterial-based PECs devices. Acknowledgments This research was supported by next generation engineering researcher program of national research foundation of Korea (NRF) funded by the Ministry of Science, ICT (NRF-2019H1D8A2106002).
    Type of Medium: Online Resource
    ISSN: 2151-2043
    URL: Article
    DOI: 10.1149/MA2020-01371560mtgabs
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2020
    detail.hit.zdb_id: 2438749-6
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  • 4
    Online Resource
    Online Resource
    Modulating the Ferroelectricity of Hafnium Zirconium Oxide Ultrathin Films via Interface Engineering to Control the Oxygen Vacancy Distribution
    Wiley ; 2022
    In:  Advanced Materials Interfaces Vol. 9, No. 7 ( 2022-03)
    Details
    In: Advanced Materials Interfaces, Wiley, Vol. 9, No. 7 ( 2022-03)
    Abstract: Hafnium oxides‐based ferroelectric materials are promising for applications in nonvolatile memory devices. To control the ferroelectricity of such materials, it is necessary to tune their polymorphism, interfacial features, and defect (oxygen vacancy) distribution. A strategy is described for enhancing the ferroelectric properties of polycrystalline hafnium zirconium oxide (HZO) ultrathin films by modifying the oxygen pressure during the device preparation stage, which involves thermal annealing of TiN electrodes that serve as oxygen reservoirs. Microstructural and chemical characterizations along with theoretical analysis reveal that interfacial layers of TiO 2− x (or TiO x N y ) can characteristically form between the TiN electrode and the HZO thin film, depending on the oxygen treatment conditions. These interfacial layers directly affect the polymorphic distribution of the as‐deposited HZO. In particular, the engineered interfacial TiO 2− x layer facilitates the generation and stabilization of ferroelectric orthorhombic phase HZO by promoting the uniform distribution of oxygen vacancies. Electric field cycling tests further highlight the enhanced ferroelectric polarization and coercive voltage following interfacial engineering. The results presented herein demonstrate successful tuning of the structural and interfacial properties of polycrystalline HZO devices, thus enabling control over their ferroelectric characteristics, which is critical for the fabrication of devices with designed functionality.
    Type of Medium: Online Resource
    ISSN: 2196-7350 , 2196-7350
    URL: Issue
    URL: Article
    DOI: 10.1002/admi.v9.7
    DOI: 10.1002/admi.202101647
    Language: English
    Publisher: Wiley
    Publication Date: 2022
    detail.hit.zdb_id: 2750376-8
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  • 5
    Online Resource
    Online Resource
    Enhanced Oxygen Evolution Reaction Performance of WO 3 /Nb:SrTiO 3 Heterostructure By Using Graphene
    The Electrochemical Society ; 2020
    In:  ECS Meeting Abstracts Vol. MA2020-02, No. 61 ( 2020-11-23), p. 3125-3125
    Details
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2020-02, No. 61 ( 2020-11-23), p. 3125-3125
    Abstract: Designing photoelectrodes by incorporation of photo-active nanomaterials is an emerging strategy to enhance photoelectrochemical performance of semiconducting metal oxides. The small diffusion paths through the ultrathin layer, large surface area, and exposing abundant active sites can effectively boost charge separation and charge transfer in photoelectrochemical water oxidation. We utilized single layer graphene as a photocatalyst on WO 3 thin film/Nb:SrTiO 3 (100) structure to enhance oxygen evolution reaction in alkaline electrolyte. The photoelectrode exhibits efficient charge transfer due to electronic properties of graphene edges. Graphene decreases onset potential and increases photo current density from 237 μA/cm 2 to 763 μA/cm 2 at 1.23 V vs RHE. In addition, such extremely thin layer can protect the photoelectrode from chemical corrosion without disturbing the light absorption. In this study, we investigated mechanism of photoelectrochemical water splitting in graphene edge. Thus, these results can provide a new route for advanced designs of nanomaterial-based PECs devices. Acknowledge : This research was supported by Next Generation Engineering Researcher Program of National Research Foundation of Korea(NRF) funded by the Ministry of Science, ICT (NRF-2019H1D8A2106002).
    Type of Medium: Online Resource
    ISSN: 2151-2043
    URL: Article
    DOI: 10.1149/MA2020-02613125mtgabs
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2020
    detail.hit.zdb_id: 2438749-6
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  • 6
    Online Resource
    Online Resource
    Selfrectifying Memristor Device Based on Polarization Switching and Space Charge Distribution Via External Electric Field
    The Electrochemical Society ; 2018
    In:  ECS Meeting Abstracts Vol. MA2018-01, No. 22 ( 2018-04-13), p. 1392-1392
    Details
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2018-01, No. 22 ( 2018-04-13), p. 1392-1392
    Abstract: Strong interest in resistive switching phenomena is driven by a possibility to develop electronic devices with novel functional properties not available in conventional systems. Bistable resistive devices are characterized by two resistance states that can be switched by an external voltage. Recently, ferroelectric memristors divices with tunable resistive behavior—have emerged as a new paradigm for nonvolatile memories and adaptive electronic circuit elements. In this work, we fabricated the tunable ferroelectric tunnel junction memristor device as future memory device. Ca doped BiFeO 3 /BiFeO 3 thin films grown on Nb doped SrTiO 3 substrate (conductive electrode) by pulsed laser deposition are studied by X-ray diffraction and I-V measurement to characterize their structure and memristive properties. These are simultaneously realized that the change of the resistance of the semiconductor substrate due to the remanent polarization of the ferroelectric thin film and the change of the anisotropic resistance due to the distribution of the space charge in the thin film were simultaneously realized. The results indicate that the self-rectifying resistive switching properties, and this device can be applied as memory device integrating the function of a selector in 3D cross point array.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    URL: Article
    DOI: 10.1149/MA2018-01/22/1392
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2018
    detail.hit.zdb_id: 2438749-6
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  • 7
    Online Resource
    Online Resource
    Study of Etch Stop Layer on Characteristics of Amorphous Aluminum Oxide Thin Film
    The Electrochemical Society ; 2022
    In:  ECS Meeting Abstracts Vol. MA2022-01, No. 21 ( 2022-07-07), p. 2433-2433
    Details
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2022-01, No. 21 ( 2022-07-07), p. 2433-2433
    Abstract: To protect the active layer, which are inter layer dielectrics (ILD) and metal lines, from being damaged by UV laser during the etching process, etch stop layers (ESL) are used in patterning process of the integrated circuits (ICs) fabrication in back end of line (BEOL). The ESL material should have a higher etch selectivity than the active layer. Therefore, it must have a low dielectric constant and high chemical resistance. Aluminum oxide compounds (AlOx, AlOC, AlON, etc.) are highly suitable for use as ESL due to the low dielectric constant between about 4 and 9, high etch selectivity, high density (2.5-3.8 g/cm 3 ) and pattern transfer capability. We focused on lowering the dielectric permittivity and increasing the density by controlling the precursor/reactant pulsed time of atomic layer deposition (ALD).
    Type of Medium: Online Resource
    ISSN: 2151-2043
    URL: Article
    DOI: 10.1149/MA2022-01212433mtgabs
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2022
    detail.hit.zdb_id: 2438749-6
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  • 8
    Online Resource
    Online Resource
    Hydrogen Evolution Reaction of BaSnO 3- δ Thin Film on p-Si
    The Electrochemical Society ; 2020
    In:  ECS Meeting Abstracts Vol. MA2020-02, No. 16 ( 2020-11-23), p. 1474-1474
    Details
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2020-02, No. 16 ( 2020-11-23), p. 1474-1474
    Abstract: Oxide perovskites are proposed as photoelectrodes for the hydrogen evolution reaction(HER) in alkaline solutions. The cubic perovskite BaSnO 3 can be used as a photoelectrode due to the edge position of conduction band, which is lower than the reduction potential. However, since it has a wide band gap of 3.1 eV, it is limited to use energy of a long wavelength including visible light. In this research, we investigated photoelectrochemical characteristics of BaSnO 3 thin film deposited by Pulsed laser deposition(PLD) with promoting oxygen vacancy. The HER performance was enhanced due to band gap adjusted oxygen vacancy concentration. Furthermore, Electrochemical Impedance Spectroscopy(EIS) was measured to confirm surface charge resistance and charge transport. Thus, this study introduces that BaSnO 3-δ /p-Si can be an efficient electrode for HER.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    URL: Article
    DOI: 10.1149/MA2020-02161474mtgabs
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2020
    detail.hit.zdb_id: 2438749-6
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  • 9
    Online Resource
    Online Resource
    Enhanced Non-Linearity Factor in Ferroelectric Tunnel Junction Based on HfO 2 Heterojunction
    The Electrochemical Society ; 2018
    In:  ECS Meeting Abstracts Vol. MA2018-01, No. 22 ( 2018-04-13), p. 1391-1391
    Details
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2018-01, No. 22 ( 2018-04-13), p. 1391-1391
    Abstract: Ferroelectric polarization, related to charge conduction, has shown some intriguing properties in ferroelectric tunnel junction as it has higher on/off ratio, lower power consumption and shorter process time. Conventional ferroelectrics have various problems when it is based on perovskite structure material, such as poor Si-compatibility, lead pollution and small energy bandgap. Recently, both ferroelectricity and anti-ferroelectricity have been reported in doped HfO 2 thin film ( 〈 30 nm). The ferroelectricity and anti-ferroelectricity HfO 2 thin films can be extremely thin with good Si-compatibility and large bandgap ( 〉 5 eV). Anti-ferroelectric/ferroelectric HfO 2 heterojunction can enhance fatigue property and non-linearity of single ferroelectric tunnel junction. The space charge can be induced due to the stress in ferroelectric layer or ferroelectric/metal interface in 90 ° domain switching while anti-ferroelectric lowers the stress in the 180 ° domain switching. The HfO 2 heterojunction can have non-linearity as it has higher resistance state under the threshold voltage for polarization switching. This structure with good fatigue property and non-linearity factor would contribute to the enhancement of ferroelectric tunnel junction memory device. This research was supported by the MOTIE (Ministry of Trade, Industry & Energy (#10080643) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    URL: Article
    DOI: 10.1149/MA2018-01/22/1391
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2018
    detail.hit.zdb_id: 2438749-6
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  • 10
    Online Resource
    Online Resource
    Synthesis of Nanocellulose Based Metal Oxide Nanostructure for Li-Ion Battery Applications
    The Electrochemical Society ; 2018
    In:  ECS Meeting Abstracts Vol. MA2018-02, No. 4 ( 2018-07-23), p. 251-251
    Details
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2018-02, No. 4 ( 2018-07-23), p. 251-251
    Abstract: Nanocellulose is considered as the sustainable materials due to renewability, affordability and non-toxicity in nature. As a chemical raw material, nanocellulose can for flexible or strong networks that are suitable templates for artificial nanostructure with enhanced electrochemical performances. Here, we prepared nanocellulose-metal oxide hybrid nanostructure from cellulose nanofibrils and oxide nanobelt via hydrothermal method using transition metal oxide precursor and TEMPO oxidized cellulose nanofibers. Oxide nanobelts with high aspect ratio are structurally uniform and single crystalline. Nanocellulose-metal oxide hybrid nanostructure presented fast charging and discharging capability with high capacity and long cycle performances. Our hybrid nanostructure can provide a new route into the development of high capacity, unique architecture, and suitable electrode potential for promising electrode materials.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    URL: Article
    DOI: 10.1149/MA2018-02/4/251
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2018
    detail.hit.zdb_id: 2438749-6
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