In:
International Journal of Modern Physics B, World Scientific Pub Co Pte Ltd, Vol. 25, No. 01 ( 2011-01-10), p. 101-110
Abstract:
A thin film transistor (TFT) characteristics measuring and bias stress applying system using an alternating current (AC) pulse sequence similar to a real driving pulse was developed to study the properties of hydrogenated amorphous-silicon (a-Si:H) TFTs under real operating conditions. Using this system, the application of a gate bias stress and the measurement of source-to-drain current were performed successfully. Degradation of the TFT transfer curve depended on the ratio of on time to off time for a fixed on time; a longer off time made the shift of threshold voltage V TH smaller. In addition, degradation of transfer curves depended on the frequency of the driving pulse; a higher frequency pulse produced a larger degradation. These results could originate from the dependence of the direction of V TH shift on the polarity of the gate bias, and the differences of injection barrier height and the mobility of the electron and hole. Using the AC driving pulse and the transient measurement system proposed in this study may be useful in understanding the response of TFTs under real operating conditions.
Type of Medium:
Online Resource
ISSN:
0217-9792
,
1793-6578
DOI:
10.1142/S021797921105480X
Language:
English
Publisher:
World Scientific Pub Co Pte Ltd
Publication Date:
2011
detail.hit.zdb_id:
2086681-1
detail.hit.zdb_id:
246716-1
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