In:
Semiconductor Science and Technology, IOP Publishing, Vol. 38, No. 4 ( 2023-04-01), p. 045002-
Abstract:
In this study, yttrium oxide (Y 2 O 3 )-based resistive random-access memory (RRAM) devices were fabricated using the sol–gel method. The fabricated Y 2 O 3 RRAM devices exhibited conventional bipolar RRAM device characteristics and did not require a forming process. The Y 2 O 3 film thickness was controlled by varying the liquid-phase precursor concentration. As the concentration increased, thicker Y 2 O 3 films were formed. In addition, the concentration of oxygen vacancies increased. The RRAM device properties were not observed for thin Y 2 O 3 films, which had the lowest oxygen vacancy concentration. Moreover, RRAM devices, which consisted of the thickest Y 2 O 3 films with the largest oxygen vacancy concentration, showed poor non-volatile properties. The optimized Y 2 O 3 -based RRAM devices with a thickness of 37 nm showed conventional bipolar RRAM device characteristics, which did not require an initial forming process. The fabricated RRAM devices showed a high resistance state to low resistance state ratio of over 10 4 , less than +1.5 V of SET voltage, and −15.0 V of RESET voltage. The RRAM devices also showed promising non-volatile memory properties, without significant degradation after 10 3 s retention and 10 2 cycle endurance tests.
Type of Medium:
Online Resource
ISSN:
0268-1242
,
1361-6641
DOI:
10.1088/1361-6641/acbb99
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2023
detail.hit.zdb_id:
54647-1
detail.hit.zdb_id:
1361285-2
Permalink