In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 9S ( 1993-09-01), p. 4107-
Abstract:
Deposition behavior of PbTiO 3 thin films on Si substrates having native oxide has been investigated by the laser ablation method using an ArF excimer laser. Atomic ratio Pb/Ti in the film decreases with increase of substrate temperature and laser shot period, but only changes slightly with increase of laser fluence. Preferentially c -axis-oriented film on Si substrate is obtained during the deposition in O 2 gas of 13 Pa at the substrate temperature of 500°C and low laser repetition rate. The change of Pb/Ti and the origin of the preferential orientation are explained by Pb reevaporation from the substrate and successive deposition of Pb and Ti layers. Dielectric constant and the remanent polarization are about 130 and 30 µC/cm 2 , respectively.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.4107
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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