In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 58, No. 3 ( 2009), p. 1954-
Abstract:
We present the design and fabrication of 13 μm vertical-cavity surface-emitting lasers (VCSELs). This laser exhibits continuous-wave single-mode operation up to 82℃. The theshold current as low as 051 mA and a slop efficiency of 029 W/A have been achieved. This laser is composed of a wafer-bonded GaAs/Al(Ga)As distributed Bragg reflector (DBR) and a dielectric SiO2/TiO2 DBR with InAsP/InGaAsP strain-compensated multi-quantum wells grown in the cavity. The effect of cavity mode-gain offset on device performance is then discussed.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2009
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