In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 22, No. 4 ( 2004-07-01), p. 2008-2013
Abstract:
In this article, the growth of cobalt at 150 °C on the Ga-rich (4×2) reconstructed GaAs(001) surface is studied, emphasizing particularly submonolayer coverage. The surfaces were analyzed using scanning tunneling microscopy, soft x-ray photoemission spectroscopy (SXPS), low-energy electron diffraction, and reflection anisotropy spectroscopy (RAS). Co deposition above 1 monolayer thickness leads to a highly reacted interface consisting of CoGa and CoAs compounds, as evidenced by SXPS. At submonolayer coverage, however, Co atoms are incorporated in the row-like structure of the clean, Ga-rich (4×2) surface, forming one-dimensional, ordered chains in the [110] direction. Scanning tunneling spectroscopy and RAS demonstrate that these rows act as one-dimensional metallic nanowires.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2004
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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