In:
Applied Physics Letters, AIP Publishing, Vol. 87, No. 1 ( 2005-07-04)
Abstract:
The effects of compressive strain relaxation with increasing n-GaN thickness on device performances of GaN blue light-emitting diodes (LEDs) were investigated. It was found that the compressive strain relaxation in LEDs with thicker n-GaN occurred more considerably, following by the growth of active layer and p-GaN, and generated many stacking faults right beneath the InGaN active layer, which might be related to a decrease of the LED output power. On the contrary, the LED photoluminescence intensity increased surprisingly with n-GaN thickness. It was understood that the compressive strain relaxation enhanced localized states in InGaN wells.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2005
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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