In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 10R ( 1993-10-01), p. 4611-
Abstract:
High-quality amorphous PbBr 2 films were obtained by quench deposition onto fused-silica substrates cooled to 77 K. The films exhibited a well-defined crystallization temperature ( T c ) of 335 K. The as-deposited films were stable at temperatures up to 160 K and relaxed to new stable random networks upon annealing at higher (but below T c ) temperatures. The optical spectra in the amorphous phase were characterized by a prominent first absorption band of nonexcitonic origin. Below the absorption edge, the amorphous films showed a very high transparency (absorption coefficients, less than 10 2 cm -1 below 3 eV) never achieved by deposition onto hot substrates.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.4611
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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