GLORIA

GEOMAR Library Ocean Research Information Access

X

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
Material
Publisher
Person/Organisation
Language
Years
FID
Subjects(RVK)
  • 1
    Online Resource
    Online Resource
    Epitaxial Growth of Si 1-y C y Film by Low Temperature Chemical Vapor Deposition
    IOP Publishing ; 2000
    In:  Japanese Journal of Applied Physics Vol. 39, No. 11A ( 2000-11-01), p. L1078-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 11A ( 2000-11-01), p. L1078-
    Abstract: Epitaxial Si 1- y C y films were grown on Si(100) by two methods, mercury sensitized photochemical vapor deposition and plasma-enhanced chemical vapor deposition, at substrate temperatures of around 200°C using SiH 4 , H 2 and C 2 H 2 . The vibration mode at 607 cm -1 , which indicated the presence of the C atoms located at the Si substitutional sites, was observed in both Fourier transform infrared absorption and Raman scattering spectroscopy of the samples annealed at 600 to 700°C. The C composition was controlled by varying the C 2 H 2 /SiH 4 ratio. The maximum substitutional C compositions of 2.3 at% and 2.7 at% were successfully obtained by mercury sensitized photochemical vapor deposition and plasma-enhanced chemical vapor deposition, respectively.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.39.L1078
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2000
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 2
    Online Resource
    Online Resource
    Amorphous-to-Polycrystalline Silicon Transition in Hot Wire Cell Method
    IOP Publishing ; 2000
    In:  Japanese Journal of Applied Physics Vol. 39, No. 8R ( 2000-08-01), p. 4712-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 8R ( 2000-08-01), p. 4712-
    Abstract: Hot Wire Cell method has been newly developed and successfully applied to grow polycrystalline silicon films at a low temperature with a relatively high growth rate. In the Hot Wire Cell method, reactant gases are decomposed as a result of reaction with a heated tungsten filament placed near a substrate and polycrystalline silicon films can be deposited at a growth rate of 0.9 nm/s without hydrogen dilution. The film crystallinity is changed from polycrystalline to amorphous by decreasing the total pressure. The model calculation of the Hot Wire Cell method is carried out and it is assumed that transition of crystallinity may be due to the shift in the preferential impinged radicals. X-ray analysis clearly showed that the films grown at the filament temperature of 1700°C have a very strong (220) preferential orientation. The films consist of large grains as well as small grains. These results suggest that the Hot Wire Cell method is a promising candidate to grow device-grade polycrystalline silicon films for photovoltaic application.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.39.4712
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2000
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 3
    Online Resource
    Online Resource
    Control of the Arrangement of the Native Gallium Vacancies in Ga 2 Se 3 on (100)GaAs by Molecular Beam Epitaxy
    IOP Publishing ; 1995
    In:  Japanese Journal of Applied Physics Vol. 34, No. 11R ( 1995-11-01), p. 5984-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 11R ( 1995-11-01), p. 5984-
    Abstract: We attempted to control the arrangement of the native Ga vacancies in Ga 2 Se 3 films on (100)GaAs substrates by molecular beam epitaxy. When the GaAs substrates were heat-treated at 550° C before growth, the vacancy-ordered superstructure was formed in the [011̄] direction, which is different from the ordering direction in Ga 2 Se 3 on (100)GaP. On the other hand, when the heat treatment was not carried out, the ordering direction was [011] at growth temperatures below 500° C. These results indicate that the initial stage of the growth affects the ordering direction in Ga 2 Se 3 on (100)GaAs. We have successfully controlled the ordering direction by introducing a Ga 2 Se 3 buffer layer grown at low temperature. Furthermore, we investigated the effects of the growth conditions on the ordering of the Ga vacancies in Ga 2 Se 3 films on (100)GaAs, and it was found that the vacancy ordering was highly developed at high VI/III ratio and low growth temperature.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.34.5984
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1995
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 4
    Online Resource
    Online Resource
    High Deposition Rate of Polycrystalline Silicon Thin Films Prepared by Hot Wire Cell Method
    IOP Publishing ; 1999
    In:  Japanese Journal of Applied Physics Vol. 38, No. 1A ( 1999-01-01), p. L24-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 1A ( 1999-01-01), p. L24-
    Abstract: The hot wire (HW) cell method has been newly developed and successfully applied to grow polycrystalline silicon films at low temperatures with a relatively high growth rate of 0.9–1.1 nm/s. In the HW cell method, mono silane (SiH 4 ) is decomposed by reacting with a heated tungsten wire placed near the substrate. It is found that polycrystalline silicon films can be obtained at substrate temperatures of 175–400°C without hydrogen dilution when the deposition pressure is 0.1 Torr.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.38.L24
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1999
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 5
    Online Resource
    Online Resource
    Textured ZnO Thin Films for Solar Cells Grown by Metalorganic Chemical Vapor Deposition
    IOP Publishing ; 1991
    In:  Japanese Journal of Applied Physics Vol. 30, No. 3B ( 1991-03-01), p. L441-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 3B ( 1991-03-01), p. L441-
    Abstract: Textured ZnO films have been grown by metalorganic chemical vapor deposition (MOCVD) using diethylzinc (DEZ) and H 2 O as reactant gases. It was found that the surface morphology of films was strongly dependent on the substrate temperature. For the low substrate temperature of 150°C, the surface consists of uniformly sized tetrapodlike features. These undoped films have a high transparency in a wide wavelength range from 400 nm to 1400 nm. The low-resistivity ZnO films have also been succesfully grown using a dopant gas of B 2 H 6 diluted with H 2 . A sheet resistivity as low as 10 Ω/□ was obtained.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.30.L441
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1991
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 6
    Online Resource
    Online Resource
    Prospects of Thickness Reduction of the CdTe Layer in Highly Efficient CdTe Solar Cells Towards 1 µm
    IOP Publishing ; 1999
    In:  Japanese Journal of Applied Physics Vol. 38, No. 8R ( 1999-08-01), p. 4666-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 8R ( 1999-08-01), p. 4666-
    Abstract: This study focuses on the technique for the stable growth of CdTe (1.44 eV) with thickness near its absorption length, 1 µm, by close spaced sublimation (hereafter CSS) process, in order to achieve high conversion efficiency. X-ray diffraction (XRD) spectroscopy was carried out to examine the microstructure of the films. Current-voltage ( I – V ) characteristics, spectral response and other features of the solar cells using these CdTe films were investigated to elucidate the optimum conditions for achieving the best performance in such thin (1 µm) CdTe solar cells. Thickness was found to be reduced by controlling the temperature profile used during CSS growth. The temperature profile was found to be an important factor in growing high-quality thin films. By controlling the growth parameters and optimizing the annealing temperature at different fabrication steps, we have succeeded, to date, in achieving cell efficiencies of 14.3% (open-circuit voltage ( V oc ): 0.82 V, short-circuit current ( J sc ): 25.2 mA/cm 2 , fill factor (F.F.): 0.695, area: 1 cm 2 ) with 5 µm, 11.4% ( V oc : 0.77 V, J sc : 23.7 mA/cm 2 , F.F.: 0.63, area: 1 cm 2 ) with 1.5 µm and 11.2% ( V oc : 0.77 V, J sc : 23.1 mA/cm 2 , F.F.: 0.63, area: 1 cm 2 ) with only 1 µm of CdTe layer thickness at an air mass of 1.5 without antireflection coatings. This is important for establishing a strong foundation before developing a new structure ( e.g. , glass/ITO/CdS/CdTe/ZnTe/Ag configuration) with a back surface field of wide-bandgap material ( e.g. , ZnTe).
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.38.4666
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1999
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 7
    Online Resource
    Online Resource
    Study of CuInSe 2 Formation Kinetics in the Selenization Process by Raman Spectroscopy
    IOP Publishing ; 1991
    In:  Japanese Journal of Applied Physics Vol. 30, No. 3R ( 1991-03-01), p. 442-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 3R ( 1991-03-01), p. 442-
    Abstract: Formation kinetics of polycrystalline CuInSe 2 films in selenization of Cu/In/Se stacked layers was studied using Raman spectroscopy. Raman spectra of the films clearly show a structural change of the film at elevated temperatures. It is concluded that Cu is selenized preferentially at low temperatures around 200°C and that the CuInSe 2 phase is formed at temperatures above 250°C.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.30.442
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1991
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 8
    Online Resource
    Online Resource
    Analysis of H 2 -Dilution Effects on Photochemical Vapor Deposition of Si Thin Films
    IOP Publishing ; 1997
    In:  Japanese Journal of Applied Physics Vol. 36, No. 10R ( 1997-10-01), p. 6481-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 10R ( 1997-10-01), p. 6481-
    Abstract: Hg-sensitized photochemical vapor deposition (photo-CVD) of Si thin films at low temperatures using a gas mixture of SiH 4 and H 2 was analyzed and the concentrations of SiH 3 and H in the gas phase were theoretically estimated. The results of the calculation were compared with the properties of the Si thin films, and the roles of atomic H were discussed. With the correlations between the radical concentrations near the growing surface and film properties such as film structure, film quality, and the concentration of bonded hydrogen in a-Si films were successfully explained. It is suggested that the roles of atomic H on the growing surface are a termination of dangling bonds on the surface and an extraction of SiH 3 radicals from the growing surface. Since the role of atomic H competes with the deposition of Si, the supply balance between the atomic H and the SiH 3 radicals is essential to determine the properties of Si thin films.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.36.6481
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 9
    Online Resource
    Online Resource
    Formation of pn Homojunction in Cu(InGa)Se 2 Thin Film Solar Cells by Zn Doping
    IOP Publishing ; 2000
    In:  Japanese Journal of Applied Physics Vol. 39, No. 8R ( 2000-08-01), p. 4816-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 8R ( 2000-08-01), p. 4816-
    Abstract: In this study, a pn homojunction was intentionally fabricated in the Cu(InGa)Se 2 (CIGS) layer by Zn doping. For Zn doping of the CIGS layer, Zn was evaporated after CIGS formation, and a potential improvement in cell performance was confirmed by this technique. Furthermore, Zn diffusion into the CIGS film was investigated by secondary ion mass spectroscopy (SIMS). A conductivity-type conversion from p-type to n-type was studied by the measurement of the cross-sectional electron beam-induced current (junction EBIC: JEBIC) and the spectral response of solar cells. A conversion efficiency of 11.5% has been achieved using the Zn-doped CIGS layer without a buffer layer and by the formation of a pn homojunction in the CIGS absorber.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.39.4816
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2000
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 10
    Online Resource
    Online Resource
    Improvement of a-Si Solar Cell Fabricated by Mercury-Sensitized Photochemical Vapor Deposition Using H 2 Dilution Technique
    IOP Publishing ; 1994
    In:  Japanese Journal of Applied Physics Vol. 33, No. 11R ( 1994-11-01), p. 6099-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 11R ( 1994-11-01), p. 6099-
    Abstract: The fabrication of hydrogen-diluted amorphous silicon (a-Si) film by the mercury-sensitized photochemical vapor deposition (photo-CVD) method has been performed. The hydrogen content in the film along with the optical bandgap was found to increase with the hydrogen/silane dilution ratio, while the dihydride/monohydride bond ratio decreased at the substrate temperature of 150° C. As a result, a decrease in the defect density was observed. Moreover, the photo- and dark conductivities were maintained in the range of 3×10 -5 and 1×10 -10 S/cm, respectively, in spite of the fact that the optical bandgap widened. The solar cells with hydrogen diluted i-layers were fabricated and showed improvement in the open-circuit voltage and fill factor (FF), resulting in the increase of both initial and stabilized efficiencies. The forward- and reverse-bias dark I-V characteristics measurement of solar cells revealed improvement in quality and stability of the hydrogen-diluted i-layers.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.33.6099
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1994
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...