In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 24, No. 5 ( 2006-09-01), p. 2256-2261
Abstract:
Electrical properties, admittance, and microcathodoluminescence spectra are compared for p-GaN samples grown by hydride vapor phase epitaxy (HVPE) and by molecular beam epitaxy (MBE). The former are characterized by a high 300K hole concentration and a weak temperature dependence of conductivity. The latter samples show strongly temperature-activated conductivity due to ionization of Mg acceptors. The main effects of neutron irradiation were similar for the p-HVPE and the p-MBE materials: a compensation of p-type conductivity starting with neutron fluences exceeding 2×1016cm−2 and conversion to high resistivity n type with the Fermi level pinned near Ec-(0.8–0.9)eV after irradiation with high doses of 1018cm−2. For the heavily neutron irradiated p-HVPE samples, a strong increase was observed in the c-lattice parameter which indicates an important role for interstitial-type defects.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2006
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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