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  • 1
    In: Journal of Physics: Conference Series, IOP Publishing, Vol. 2374, No. 1 ( 2022-11-01), p. 012071-
    Abstract: The Shunt-LDO regulator has been integrated in the ATLAS and the CMS pixel detector RD53 front-end chip to implement the serial powering scheme which both experiments have chosen as the baseline option for the HL-LHC upgrade. The performance of the integrated regulators has been characterized and specific design challenges have been identified which are related to layout parasitics and shallow trench isolation (STI) stress effects. In addition the functionality of circuits which address crucial system level aspects like the protection against overvoltage/overload has been verified.
    Type of Medium: Online Resource
    ISSN: 1742-6588 , 1742-6596
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 2166409-2
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  • 2
    In: Journal of Sensors and Sensor Systems, Copernicus GmbH, Vol. 6, No. 2 ( 2017-08-22), p. 285-301
    Abstract: Abstract. In this paper we present a readout circuit for capacitive micro-electro-mechanical system (MEMS) sensors such as accelerometers, gyroscopes or pressure sensors. A flexible interface allows connection of a wide range of types of sensing elements. The ASIC (application-specific integrated circuit) was designed with a focus on ultra-low noise operation and high analog measurement performance. Theoretical considerations on system noise are presented which lead to design requirements affecting the reachable overall measurement performance. Special emphasis is put on the design of the fully differential operational amplifiers, as these have the dominant influence on the achievable overall performance. The measured input referred noise is below 50 zF/Hz within a bandwidth of 10 Hz to 10 kHz. Four adjustable gain settings allow the adaption to measurement ranges from ±750 fF to ±3 pF. This ensures compatibility with a wide range of sensor applications. The full input signal bandwidth ranges from 0 Hz to more than 50 kHz. A high-precision accelerometer system was built from the described ASIC and a high-sensitivity, low-noise sensor MEMS. The design of the MEMS is outlined and the overall system performance, which yields a combined noise floor of 200 ng/Hz, is demonstrated. Finally, we show an application using the ASIC together with a CMOS integrated capacitive pressure sensor, which yields a measurement signal-to-noise ratio (SNR) of more than 100 dB.
    Type of Medium: Online Resource
    ISSN: 2194-878X
    Language: English
    Publisher: Copernicus GmbH
    Publication Date: 2017
    detail.hit.zdb_id: 2733700-5
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  • 3
    Online Resource
    Online Resource
    MDPI AG ; 2018
    In:  Sensors Vol. 18, No. 12 ( 2018-12-08), p. 4338-
    In: Sensors, MDPI AG, Vol. 18, No. 12 ( 2018-12-08), p. 4338-
    Abstract: Light detection and ranging (LiDAR) systems based on silicon single-photon avalanche diodes (SPAD) offer several advantages, like the fabrication of system-on-chips with a co-integrated detector and dedicated electronics, as well as low cost and high durability due to well-established CMOS technology. On the other hand, silicon-based detectors suffer from high background light in outdoor applications, like advanced driver assistance systems or autonomous driving, due to the limited wavelength range in the infrared spectrum. In this paper we present a novel method based on the adaptive adjustment of photon coincidence detection to suppress the background light and simultaneously improve the dynamic range. A major disadvantage of fixed parameter coincidence detection is the increased dynamic range of the resulting event rate, allowing good measurement performance only at a specific target reflectance. To overcome this limitation we have implemented adaptive photon coincidence detection. In this technique the parameters of the photon coincidence detection are adjusted to the actual measured background light intensity, giving a reduction of the event rate dynamic range and allowing the perception of high dynamic scenes. We present a 192 × 2 pixel CMOS SPAD-based LiDAR sensor utilizing this technique and accompanying outdoor measurements showing the capability of it. In this sensor adaptive photon coincidence detection improves the dynamic range of the measureable target reflectance by over 40 dB.
    Type of Medium: Online Resource
    ISSN: 1424-8220
    Language: English
    Publisher: MDPI AG
    Publication Date: 2018
    detail.hit.zdb_id: 2052857-7
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  • 4
    Online Resource
    Online Resource
    Institute of Electrical and Electronics Engineers (IEEE) ; 2018
    In:  IEEE Transactions on Circuits and Systems I: Regular Papers Vol. 65, No. 3 ( 2018-3), p. 970-981
    In: IEEE Transactions on Circuits and Systems I: Regular Papers, Institute of Electrical and Electronics Engineers (IEEE), Vol. 65, No. 3 ( 2018-3), p. 970-981
    Type of Medium: Online Resource
    ISSN: 1549-8328 , 1558-0806
    Language: Unknown
    Publisher: Institute of Electrical and Electronics Engineers (IEEE)
    Publication Date: 2018
    detail.hit.zdb_id: 2028230-8
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  • 5
    In: Sensors, MDPI AG, Vol. 19, No. 19 ( 2019-09-23), p. 4110-
    Abstract: This article presents a new configurable wireless sensor system. The system is used to perform amperometric measurements and send the measurement data to a handheld reader using a wireless transponder interface. The two-chip sensor system was implemented in a 0.35 μm CMOS technology. The system consists of an integrated nano-potentiostat that performs the actual measurements and an ISO 18000-3 compliant frontend that enables wireless telemetric data transmission and powering of the entire sensor system. The system was manufactured in combination with a chronoamperometric glucose sensor which allows the measurement of the glucose content in tear fluid and thus a non-invasive determination of the blood sugar level. For a range of sensor currents from 0.1 μA to 10 μA, the potentiostat achieved an accuracy of better than 5 % with a total power dissipation of less than 600 μW. With the realized antenna geometry a wireless communication distance of more than 7 cm has been achieved.
    Type of Medium: Online Resource
    ISSN: 1424-8220
    Language: English
    Publisher: MDPI AG
    Publication Date: 2019
    detail.hit.zdb_id: 2052857-7
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  • 6
    Online Resource
    Online Resource
    IMAPS - International Microelectronics Assembly and Packaging Society ; 2013
    In:  Journal of Microelectronics and Electronic Packaging Vol. 10, No. 4 ( 2013-10-01), p. 171-182
    In: Journal of Microelectronics and Electronic Packaging, IMAPS - International Microelectronics Assembly and Packaging Society, Vol. 10, No. 4 ( 2013-10-01), p. 171-182
    Abstract: Analog circuits realized in a PD-SOI (partially-depleted silicon-on-insulator) CMOS technology for a wide temperature range up to 400°C are significantly affected by the transistor characteristics at high temperatures. As leakage currents increase with temperature, the analog device performance, for example, intrinsic gain and bandwidth, tend to decrease. Both effects influence the precision of analog circuits and lead to malfunction of the circuitry at high temperatures. Enhancement of the MOSFET device performance and improved design techniques are required to handle these issues. In this paper, we demonstrate that RBB (reverse body biasing) is a useful method to improve the analog performance of PD-SOI transistors and also to push the limit of analog circuit design in SOI technology beyond 300°C. It allows beneficial FD (fully depleted) device characteristics in a 1.0 μm PD-SOI CMOS technology by manipulating the depletion condition of the silicon film. Due to reduced leakage currents, operation in the moderate inversion region of the SOI transistor device up to 400°C is feasible. The method is verified by experimental results of transistors with an H-shaped gate (HGATE), an analog switch, current mirrors, a two-stage operational amplifier, and a bandgap voltage reference. The normalized leakage current of HGATE devices at high temperatures can be reduced by more than one order of magnitude. Thereby, the gm/Id factor is improved significantly especially in the moderate inversion region, which has been inaccessible due to leakage currents. As a result, the intrinsic gain of HGATE transistors is improved. As the method has also been applied to essential analog circuits, it has been found that RBB significantly reduces the errors related to leakage currents and enables the operation of analog circuits in PD-SOI technology up to 400°C.
    Type of Medium: Online Resource
    ISSN: 1551-4897
    Language: English
    Publisher: IMAPS - International Microelectronics Assembly and Packaging Society
    Publication Date: 2013
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  • 7
    Online Resource
    Online Resource
    Elsevier BV ; 2023
    In:  Solid-State Electronics Vol. 199 ( 2023-01), p. 108513-
    In: Solid-State Electronics, Elsevier BV, Vol. 199 ( 2023-01), p. 108513-
    Type of Medium: Online Resource
    ISSN: 0038-1101
    Language: English
    Publisher: Elsevier BV
    Publication Date: 2023
    detail.hit.zdb_id: 2012825-3
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  • 8
    Online Resource
    Online Resource
    IOP Publishing ; 2022
    In:  Journal of Optics Vol. 24, No. 3 ( 2022-03-01), p. 034008-
    In: Journal of Optics, IOP Publishing, Vol. 24, No. 3 ( 2022-03-01), p. 034008-
    Abstract: Time correlated single photon counting is a statistical method to generate time-correlated histograms (TC-Hists), which are based on the time-of-flight information measured by photon detectors such as single-photon avalanche diodes. With restricted measurements per histogram and the presence of high background light, it is challenging to obtain the target distance in a TC-Hist. In order to improve the data processing robustness under these conditions, the concept of machine learning is applied to the TC-Hist. Using the neural network-based multi-peak analysis (NNMPA), introduced by us, including a physics-guided feature extraction and a distance prediction process, the analysis is focused on a small number of critical features in the TC-Hist. Based on these features, possible target distances with correlated certainty values are inferred. Furthermore, two optimization approaches regarding learning ability and real-time performance are discussed. In particular, variants of the NNMPA are evaluated on both synthetic and real datasets. The proposed method not only has higher robustness in allocating the coarse position ( ± 5 % ) of the target distance in harsh conditions, but also is faster than the classical digital processing with an average-filter and noise suppression. Thus, it can be applied to improve the system robustness, especially in the case of high background light and middle-range detections.
    Type of Medium: Online Resource
    ISSN: 2040-8978 , 2040-8986
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 2532144-4
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  • 9
    Online Resource
    Online Resource
    Institute of Electrical and Electronics Engineers (IEEE) ; 2022
    In:  IEEE Sensors Journal Vol. 22, No. 12 ( 2022-6-15), p. 11328-11335
    In: IEEE Sensors Journal, Institute of Electrical and Electronics Engineers (IEEE), Vol. 22, No. 12 ( 2022-6-15), p. 11328-11335
    Type of Medium: Online Resource
    ISSN: 1530-437X , 1558-1748 , 2379-9153
    Language: Unknown
    Publisher: Institute of Electrical and Electronics Engineers (IEEE)
    Publication Date: 2022
    detail.hit.zdb_id: 2052059-1
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  • 10
    Online Resource
    Online Resource
    IMAPS - International Microelectronics Assembly and Packaging Society ; 2016
    In:  Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) Vol. 2016, No. HiTEC ( 2016-01-01), p. 000112-000115
    In: Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT), IMAPS - International Microelectronics Assembly and Packaging Society, Vol. 2016, No. HiTEC ( 2016-01-01), p. 000112-000115
    Abstract: Power electronics is a rapidly developing application area for high temperature electronics. Wide bandgap semiconductors have intrinsic advantages for high temperature operation due to the large bandgap in comparison to silicon based semiconductors. Especially GaN is a promising material for power semiconductors due to the possibility to process GaN on silicon carrier wafers, which results in lower device costs in comparison to SiC. In addition GaN provides higher switching frequencies and lower on-resistances of power devices. In combination these advantages enable the design of high performing, small size power modules operating at elevated temperatures. However, in order to exploit all benefits from GaN technology, new approaches in driver design are necessary. In this work a GaN specific gate driver supporting increased switching frequency, low driver output resistance, and GaN specific control voltages is presented. The driver has been implemented in a 0.35 micron thin film SOI-CMOS technology allowing high temperature operation up to 250 °C. The driver output characteristic is digitally adjustable with configuration data stored in an on-chip non-volatile memory based on EEPROM.
    Type of Medium: Online Resource
    ISSN: 2380-4491
    Language: English
    Publisher: IMAPS - International Microelectronics Assembly and Packaging Society
    Publication Date: 2016
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