In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 23, No. 1A ( 1984-01-01), p. L4-
Abstract:
Deep-level photoluminescence spectra of Cr-doped GaAsP alloys have been measured systematically over the whole composition range. It has been found that the Cr-related luminescence spectra of GaAs 1- x P x :Cr alloys exhibit only a broad band without the well-known characteristic sharp zero-phonon line as in GaAs and GaP, and the peak position is nearly unchanged with respect to the alloy composition below the phosphorus composition of x ∼0.65. Moreover the halfwidth of the Cr-related band is larger in GaAsP than in GaAs and GaP. Luminescence-excitation data indicate that the below-gap excitation is dominant in GaAsP alloys.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1984
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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