In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 4S ( 2013-04-01), p. 04CC23-
Abstract:
In this work, we measured 1/ f noise of independent-double-gate- (IDG-) fin-type FET (FinFET) which has two independent gates. Flicker noise of common-double-gate- (CDG-) mode which both gates are applied with the same voltage and IDG-mode that has one gate voltage grounded and the other gate voltage applied with arbitrary voltage, and both result were compared with the same drain current ( I d ). First, we measured relationship between characteristic of the normalized 1/ f noise by I d ( S I d / I d 2 ) and characteristic of I d . Both the S I d / I d 2 of IDG- and CDG-modes show nearly equal values and tendency. Next, this work also shows the relationship between 1/ f noise and vertical electric field ( E ⊥ ) of surface of gate oxide film. As a result we could not definitely see a large margin of 1/ f noise between CDG- and IDG-modes from E ⊥ . This work also discovered that 1/ f noise was greatly influenced by I d density.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.04CC23
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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