In:
Small, Wiley, Vol. 9, No. 19 ( 2013-10-11), p. 3295-3300
Abstract:
A highly flexible and transparent transistor is developed based on an exfoliated MoS 2 channel and CVD‐grown graphene source/drain electrodes. Introducing the 2D nanomaterials provides a high mechanical flexibility, optical transmittance (∼74%), and current on/off ratio ( 〉 10 4 ) with an average field effect mobility of ∼4.7 cm 2 V −1 s −1 , all of which cannot be achieved by other transistors consisting of a MoS 2 active channel/metal electrodes or graphene channel/graphene electrodes. In particular, a low Schottky barrier (∼22 meV) forms at the MoS 2 /graphene interface, which is comparable to the MoS 2 /metal interface. The high stability in electronic performance of the devices upon bending up to ±2.2 mm in compressive and tensile modes, and the ability to recover electrical properties after degradation upon annealing, reveal the efficacy of using 2D materials for creating highly flexible and transparent devices.
Type of Medium:
Online Resource
ISSN:
1613-6810
,
1613-6829
DOI:
10.1002/smll.201300134
Language:
English
Publisher:
Wiley
Publication Date:
2013
detail.hit.zdb_id:
2168935-0
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