In:
VLSI Design, Hindawi Limited, Vol. 8, No. 1-4 ( 1998-01-01), p. 79-86
Abstract:
The nanoelectronic modeling (NEMO) program is the result of a three-year
development effort involving four universities and the former Corporate Research and Development Laboratory of Texas Instruments, now Applied Research Laboratory,
Raytheon TI Systems, to create a comprehensive quantum device modeling tool for layered semiconductor structures. Based on the non-equilibrium Green function
formalism, it includes the effects of quantum charging, bandstructure and incoherent scattering from alloy disorder, interface roughness, acoustic phonons, and polar optical
phonons. NEMO addresses the diverse needs of two different types of users: (i) the engineer/experimentalist who desires a black-box design tool and (ii) the theorist who is
interested in a detailed investigation of the physics. A collection of models trade off physical content with speed and memory requirements. Access to this comprehensive
theoretical framework is accommodated by a Graphical User Interface (GUI) that facilitates device prototyping and in situ data analysis. We describe a hierarchical
software design that allows rapid incorporation of theory enhancements while maintaining a user-friendly GUI, thus satisfying the conflicting criteria of ease of use
and ease of development. The theory and GUI modules share data structures that define the device structure, material parameters, and simulation parameters. These data
structures may contain general data such as integer and real numbers, option lists, vectors, matrices and the labels for both batch and GUI operation. NEMO generates
the corresponding GUI elements at run-time for display and entry of these data structures.
Type of Medium:
Online Resource
ISSN:
1065-514X
,
1563-5171
Language:
English
Publisher:
Hindawi Limited
Publication Date:
1998
detail.hit.zdb_id:
2022068-6
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