In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 4R ( 2013-04-01), p. 045602-
Abstract:
We have investigated the effects of bias voltage and substrate temperature on the growth process of RF-magnetron-sputtered BN films. When the negative bias voltage was higher than 80 V, films including the sp 3 -BN phase grew even if the substrate temperature was RT. When the substrate temperature and the negative bias voltage were 600 °C and 〉 100 V, respectively, films containing more than 90% sp 3 -BN phase were grown. The growth process of films deposited at 150 and 600 °C under a constant bias voltage of -100 V was studied by Near edge X-ray absorption fine structure (NEXAFS) measurements. These films consisted of two layers: an sp 2 -BN phase underlayer and an sp 3 -BN phase top layer. The sp 2 -BN underlayer had a preferential orientation of the c -axis parallel to the film surface. The thickness of the sp 2 -BN underlayer decreased with increasing substrate temperature. High substrate temperatures assisted the nucleation and growth of the sp 3 -BN phase.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.045602
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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