In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 9, No. 2 ( 1991-03-01), p. 748-751
Abstract:
Scanning tunneling microscope images lead us to the conclusion that the thermal desorption of native oxides on Si(111) does not occur layer by layer but through the formation and lateral growth of voids. This conclusion is consistent with results obtained by reflection high-energy electron diffraction, i.e., that in desorption stages, a (7×7) pattern appears with streaky diffraction spots due to small diffraction areas and with a background due to an amorphous oxide film on the surface. It also agrees with Auger electron spectroscopy results, that is, the temperature dependence of the oxide area before and during desorption. Nucleation centers for voids have not been identified.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1991
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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