In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 10R ( 1993-10-01), p. 4661-
Abstract:
The crystallinities and electrical properties of homoepitaxial diamond films grown from carbon monoxide have been investigated. The films were grown on high-pressure synthesized diamond (100) and (111) substrates by microwave plasma chemical vapor deposition, and were characterized by means of atomic force microscopy, reflection high-energy electron diffraction, cathodoluminescence, secondary electron microscopy and Hall effect measurement. The (100) films were smooth, whereas films grown on the (111) substrate became rough. The boron-doped (100) film also exhibited Hall mobility of 451 cm 2 /Vs.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.4661
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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