In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 2S ( 1995-02-01), p. 1085-
Abstract:
Selectively grown AlGaAs/GaAs heterojunction bipolar transistor (HBT) with a reduced base-collector capacitance is proposed and fabricated using selective metalorganic chemical vapor deposition (MOCVD) technique. The proposed HBT features a triangular void over SiO 2 stripe. The extrinsic base-collector capacitance is significantly reduced due to the isolation of the extrinsic collector region from the collector metal contact by the void. The DC current-voltage characteristics of the selectively grown HBT are similar to those of the conventional one. However, the microwave performance is improved due to the reduced base-collector capacitance in the selectively grown HBT. For the device with two 3×10 µ m 2 emitter fingers, the selectively grown HBT has a maximum oscillation frequency 1.4 times higher than that of the conventional device, and the current gain cutoff frequency f T of 43 GHz and the maximum oscillation frequency f max of 20.5 GHz are obtained.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.1085
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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