In:
physica status solidi c, Wiley, Vol. 7, No. 7-8 ( 2010-07), p. 1801-1803
Abstract:
Thermal properties of 405 nm GaN‐based laser diodes were investigated by employing a transient heating response method based on the temperature dependence of diode forward voltage. Thermal resistances of materials consisting of packaged laser diodes were differentiated in transient thermal response curves at a current below threshold current. With a current above threshold current, no significant change in thermal resistances and difference between junction‐up and junction‐down laser diodes was observed at pulses shorter than 3 sec. From an analysis with long current injections, thermal resistance of a packaged laser diode with a junction‐up bonding was ∼45 °C/W which was higher than that of a junction‐down bonded laser diode by ∼10 °C/W. Further analyses based on parameters obtained from voltage recovery curves indicated that the time constant for cooling is directly related to the thermal resistance and thermal capacitance of a laser diode package. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Type of Medium:
Online Resource
ISSN:
1862-6351
,
1610-1642
DOI:
10.1002/pssc.200983498
Language:
English
Publisher:
Wiley
Publication Date:
2010
detail.hit.zdb_id:
2105580-4
detail.hit.zdb_id:
2102966-0
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