In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 12S ( 1998-12-01), p. 6819-
Abstract:
Inductively coupled plasma (ICP) etching of a WN x film using an auxiliary rf plasma source is applied for preparing X-ray mask absorber patterning. WN x is effectively etched with SF 6 gas plasma and the addition of Ar and N 2 results in higher dissociation of the SF 6 gas and sidewall passivation effect, respectively. Pattern distortion observed for high-aspect-ratio patterns is minimized by multistep etching and an O 2 plasma treatment process. As a result, 0.18 µm WN x line and space patterns with vertical sidewall profiles are successfully fabricated.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.6819
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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