In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 12S ( 1993-12-01), p. 6126-
Abstract:
The thermal stability of plasma-enhanced chemical-vapor-deposited tungsten nitride (PECVD-W-N) thin film has been investigated as a diffusion barrier between Al or Au and Si during subsequent annealing at 550-850°C. The atomic concentrations of N in as-deposited W 100- x N x films are varied from 0 to 75 at.% corresponding to NH 3 /WF 6 ratio, and their resistivities are varied from 10-460 µΩ·cm. Rutherford backscattering spectrometry, Auger electron depth profiles, X-ray diffraction and transmission electron microscopy show that 900 Å PECVD-W 67 N 33 film interposed between Al or Au and Si is less permeable than sputtered TiN and PECVD-W film due to interstitial N atoms and Si/W 67 N 33 /Au maintaining the integrity of interface while the furnace post annealing is carried out at 850°C for 30 min.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.6126
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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