In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 60, No. 5 ( 2021-05-01), p. 050904-
Abstract:
C 2 F 4 is a potential etching gas for high aspect ratio etching of SiO 2 films owing to its high etch rate. However, it is difficult to fill C 2 F 4 to a gas cylinder with high pressure for mass production due to its high reactivity. To overcome this problem, we developed an etching system, where the on-site synthesized C 2 F 4 from CF 4 using a VHF plasma was supplied directly into the etching reactor. It was demonstrated that SiO 2 etching using synthesized-C 2 F 4 /O 2 /Ar gas mixture plasma was carried out successfully and the etch rate became 2.7 times higher than that of CF 4 /O 2 /Ar gas mixture plasma.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.35848/1347-4065/abf9e3
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2021
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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