In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 55, No. 2 ( 2016-02-01), p. 021203-
Abstract:
We study the effect of indium–gallium–zinc oxide (IGZO) crystallinity on oxygen vacancies that play an important role in the characteristics of IGZO-based devices. Optical and electrical measurements revealed that deep defect levels due to oxygen vacancies are largely eliminated in c -axis-aligned crystal IGZO (CAAC-IGZO), which has increased crystallinity without clear grain boundaries. In this study, the correlation between crystallinity and oxygen vacancy formation has been examined by first-principles calculations to investigate the effect of oxygen vacancies in IGZO. Furthermore, the likelihood of oxygen vacancy formation at an edge portion of single-crystal IGZO has been verified by observations of oxygen atoms at the edge region of the IGZO film by annular bright-field scanning transmission electron microscopy (ABF-STEM). Experimental and calculation results show that the high crystallinity of IGZO is important for the inhibition of oxygen vacancies.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.55.021203
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2016
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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