In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 1S ( 1993-01-01), p. 376-
Abstract:
Features of thin strontium titanate (SrTiO 3 ) films are a high dielectric constant (ε r ) and chemical and structural stability. Submicron SrTiO 3 patterning is necessary for realizing future planar dynamic random access memory (DRAM) structures to suppress parasitic capacitance. The etching technology and reaction with SrTiO 3 film were investigated. It was found that the SrTiO 3 film could be chemically etched by Cl 2 and SF 6 mixture gas, and 0.6 µm SrTiO 3 patterns were etched by Cl 2 with 10%-SF 6 gases. In addition, the side wall deposition layer was removed by rinsing with CH 3 COOH, HNO 3 and HF mixture solution.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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