In:
Journal of Applied Physics, AIP Publishing, Vol. 110, No. 5 ( 2011-09-01)
Kurzfassung:
Phase-pure epitaxial thin films of (Ti,V)2GeC have been grown onto Al2O3(0001) substrates via magnetron sputtering. The c lattice parameter is determined to be 12.59 Å, corresponding to a 50/50 Ti/V solid solution according to Vegard’s law, and the overall (Ti,V):Ge:C composition is 2:1:1 as determined by elastic recoil detection analysis. The minimum temperature for the growth of (Ti,V)2GeC is 700 °C, which is the same as for Ti2GeC but higher than that required for V2GeC (450 °C). Reduced Ge content yields films containing (Ti,V)3GeC2 and (Ti,V)4GeC3. These results show that the previously unknown phases V3GeC2 and V4GeC3 can be stabilized through alloying with Ti. For films grown on 4H-SiC(0001), (Ti,V)3GeC2 was observed as the dominant phase, showing that the nucleation and growth of (Ti,V)n + 1GeCn is affected by the choice of substrate; the proposed underlying physical mechanism is that differences in the local substrate temperature enhance surface diffusion and facilitate the growth of the higher-order phase (Ti,V)3GeC2 compared to (Ti,V)2GeC.
Materialart:
Online-Ressource
ISSN:
0021-8979
,
1089-7550
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2011
ZDB Id:
220641-9
ZDB Id:
3112-4
ZDB Id:
1476463-5
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