In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 3R ( 1992-03-01), p. 882-
Abstract:
Yields of secondary electrons from the (001) surface of SnTe are studied at the impact of 0.3-0.8 MeV/amu H + , H 2 + and H 3 + ions. The yield per ion upon impact of the H n + ion is more than n times as large as that of isotachic proton impact. The observed molecular effects in the yields are explained as being the result of increased stopping power for fragment protons and of electrons released from the molecular ions upon their dissociation. It is also shown that the scaling relation, γ 3 =2γ 2 -γ 1 , remains roughly constant at oblique incidence angles up to 10° to the surface, where γ n is the yield at H n + incidence.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1992
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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