In:
Journal of Materials Research, Springer Science and Business Media LLC, Vol. 17, No. 1 ( 2002-01), p. 107-114
Abstract:
The atomic layer deposition technique was used to deposit TaN thin films from TaCl 5 and TaBr 5 and tert -butylamine or allylamine as a reductive nitrogen source with and without ammonia. The films were characterized with time-of-flight elastic recoil detection analysis, energy-dispersive x-ray spectroscopy, x-ray diffraction, and the standard four-point probe method. The films deposited from tert -butylamine and ammonia with both tantalum precursors had reasonably low halide contents. When allylamine was used as a nitrogen source, on the contrary, the films contained larger amounts of chlorine and other impurities. The resistivity increased markedly as the deposition temperature was decreased. The lowest resistivities (below 1500 μΩ cm) were obtained when the films were deposited from TaCl 5 or TaBr 5 with tert -butylamine at 500 °C.
Type of Medium:
Online Resource
ISSN:
0884-2914
,
2044-5326
DOI:
10.1557/JMR.2002.0017
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2002
detail.hit.zdb_id:
54876-5
detail.hit.zdb_id:
2015297-8
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