In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 3B ( 1995-03-01), p. L379-
Abstract:
Initial nucleation and formation processes of a-Si:H clusters on single-crystal graphite have been studied by ultrahigh-vacuum scanning tunneling microscopy and Raman scattering spectroscopy. It is critically demonstrated that hydrogen radicals coming from the SiH 4 plasma create structural defects on the surface of the single-crystal graphite which act as absorption sites for SiH 3 radicals diffusing on the surface. On the basis of this picture, spatially-inhomogeneous formation of a-Si:H clusters prior to full coverage of the surface is also discussed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.L379
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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