In:
Applied Physics Express, IOP Publishing, Vol. 14, No. 4 ( 2021-04-01), p. 046501-
Abstract:
We report the first experimental demonstration of microwave oscillation in GaN impact ionization avalanche time transit (IMPATT) diodes at the X-band. The device used in this study is a single drift diode with a p + –n simple abrupt junction and vertical mesa termination. The reverse I – V characteristic of the diode shows low leakage current, clear avalanche breakdown, and high avalanche capability, as required for IMPATT operation. Microwave testing is performed in an X-band waveguide circuit with a reduced-height waveguide resonant cavity. Oscillations are observed at 9.52 GHz at a power of ∼56 mW.
Type of Medium:
Online Resource
ISSN:
1882-0778
,
1882-0786
DOI:
10.35848/1882-0786/abe3dc
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2021
detail.hit.zdb_id:
2417569-9
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