In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 10R ( 1993-10-01), p. 4652-
Abstract:
We demonstrate the in situ X-ray monitoring of metalorganic vapor phase epitaxy by using a four-crystal monochromator. The in situ X-ray measurement of InGaAs with a thickness of 0.3 µm on an InP substrate was achieved even under growth conditions at 620°C. Moreover, this monitoring technique is not affected by the atmosphere of the reactant source gasses. Also, the X-ray peak of the InGaAs at 300°C, is clearly separated from the InP peak in spite of the small lattice mismatch (-0.09%) without aligning the wafer. The dependence of lattice mismatch on temperature measured by this X-ray monitoring technique agrees with the dependence calculated theoretically. This technique can also be used to measure the thickness dependence of lattice mismatch and temperature dependence of in-plane compressive strain for InP on GaAs heteroepitaxy.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.4652
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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