In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 7A ( 2001-07-01), p. L657-
Abstract:
Zinc oxide (ZnO) of high quality was homoepitaxially grown by metal-organic vapor phase epitaxy (MOVPE) on molecular beam epitaxy (MBE)-grown ZnO layers after the pretreatment of the underlying MBE-ZnO at 1000°C in N 2 which resulted in an atomically flat surface. In photoluminescence at 15 K, the 3 meV line width of the emission from donor-bound-excitons (D 0 X) and the observation of the fourth phonon replica of the emission from free-excitons (EX) have demonstrated the high potential of MOVPE growth of ZnO toward optical applications.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.L657
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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