In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 4B ( 1995-04-01), p. L513-
Abstract:
Nearly stoichiometric CuInS 2 thin films have been prepared on Pyrex slide glass by the reactive sputtering method using CS 2 as a reactive gas at a substrate temperature of 150° C by controlling the CS 2 partial pressure. Sputtering for 2 hours yields the thickness of 1∼2 µ m. The films are preferentially oriented with the (112) plane parallel to the substrate. The forbidden gap is estimated to be 1.51 eV which is slightly smaller than that of the single crystal. For films with fairly good stoichiometry, the conduction is p-type and the resistivity ranges between 10 and 10 4 Ω· cm. A fairly large amount of carbon is incorporated during growth.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.L513
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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