In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 28, No. 3 ( 2010-05-01), p. C3E1-C3E5
Abstract:
The growth rate of nominal Ge2Sb2Te5 phase change material epitaxially grown from the elements by molecular beam epitaxy rapidly decreases above ≈180 °C substrate temperature. A theoretical estimate of this behavior reveals congruent sublimation of the layer, suggesting that it may possess characteristics of a molecular crystal consisting of rather stable subunits with weaker bonds between them. In situ synchrotron x-ray diffraction data of the layers show a peculiar anisotropic broadening of the reflections, consistent with a small rhombohedral distortion of the unit cell analogous to GeTe. The three-dimensional mosaicity due to the growth on a strictly cubic substrate can be avoided by growing on the (111) plane, orienting the distortion in the growth direction to establish an exact match of the in-plane symmetries at the interface.
Type of Medium:
Online Resource
ISSN:
2166-2746
,
2166-2754
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2010
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
1475429-0
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