In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 7S ( 2000-07-01), p. 4536-
Abstract:
We have investigated the growth mechanism of SiC film by the thermal
reaction of C 60 molecules adsorbed on a Si(111)-(7×7) surface
using photoelectron spectroscopy. The growth of SiC film, performed by repeating the sample annealing at 1370 K following the adsorption of C 60 molecules, is confirmed by the
profile of the valence spectrum. The bonding nature between C 60 molecules and the SiC surface is
considered to have a covalent character at 300 and 670 K, and both covalent and ionic characters at 870 K by the thermal-dependent valence and C 1 s core level spectra of a 1 monolayer C 60 film adsorbed on SiC.
Furthermore, we determined that the breaking of the C 60 cage and the
formation of SiC occurred at 1070 K, i.e. at a temperature 100 K lower than that on a Si(111) surface.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.4536
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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