In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 11R ( 1999-11-01), p. 6487-
Abstract:
About 0.4-µm-thick GaN films were epitaxially grown on a LaAlO 3 (100) substrate by rf plasma assisted molecular beam epitaxy. The growth mode was monitored by reflection high-energy electron diffraction and the crystalline quality of the GaN films was characterized by X-ray diffraction and transmission electron microscopy. The matching face relationship between GaN and the LaAlO 3 (100) substrate was [0001]GaN ∥[100] LaAlO 3 and [0110]GaN ∥[011] LaAlO 3 , and a lattice mismatch of ∼3% for the [011] plane was estimated.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.6487
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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